Title :
Reduction of depth variation in an Si etching process by applying an optimized run-to-run control system
Author :
Miwa, Kazuhiro ; Inokuchi, Takuro ; Takahashi, Teruhiko ; Oikawa, Akira ; Imaoka, Kazunori
Author_Institution :
Spansion LLC, Fukushima, Japan
Abstract :
A reduction of depth variation in a shallow trench isolation process is desired for obtaining more stable electrical performances of silicon devices. By applying an optimized run-to-run control system to a silicon trench etching process, trench depth variation of the process was reduced. Cp/Cpk of the trench depth of product wafers were improved from 1.10/0.83 to 1.39/1.34 by the control.
Keywords :
etching; isolation technology; optimised production technology; process control; silicon; Si; isolation technology; optimised production technology; optimized run-to-run control system; process control; shallow trench isolation process; silicon trench etching process; trench depth variation reduction; Chemical processes; Cleaning; Control systems; Fabrication; Filling; Scanning electron microscopy; Semiconductor films; Silicon devices; Voltage; Wet etching; Feedback; run-to-run control; shallow trench isolation; silicon etching; variation;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
DOI :
10.1109/TSM.2005.858473
