Title :
A novel approach for the patterning and high-volume production of sub-40-nm gates
Author :
Romero, K. ; Stephan, Rolf ; Grasshoff, Gunter ; Mazur, Martin ; Ruelke, Hartmut ; Huy, Katja ; Klais, Jochen ; McGowan, Sarah ; Dakshina-Murthy, Srikanteswara ; Bell, Scott ; Wright, Marilyn
Author_Institution :
Adv. Micro Devices, Dresden, Germany
Abstract :
A novel approach for the patterning and manufacturing of sub-40-nm gate structures is presented. Rather than using resist or an inorganic hardmask as the patterning layer, this gate patterning scheme uses an amorphous carbon (a:C) and cap hardmask to pattern small gates. Healthy and manufacturable gate lengths have been achieved below 35 nm with this scheme, and the potential exists for further extendibility.
Keywords :
amorphous semiconductors; carbon; masks; nanotechnology; semiconductor device manufacture; semiconductor technology; surface treatment; C; amorphous carbon; amorphous semiconductors; cap hardmask; electron device manufacture; gate patterning; high-volume production; nanopatterning; nanotechnology; semiconductor technology; surface treatment; Amorphous materials; Etching; Lithography; Manufacturing; Optical films; Optical refraction; Optical variables control; Production; Resists; Semiconductor films; Amorphous carbon; etching; extendibility; gate patterning; hardmask;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
DOI :
10.1109/TSM.2005.858518
