Title :
A 4-Mb toggle MRAM based on a novel bit and switching method
Author :
Engel, B.N. ; Åkerman, J. ; Butcher, B. ; Dave, R.W. ; DeHerrera, M. ; Durlam, M. ; Grynkewich, G. ; Janesky, J. ; Pietambaram, S.V. ; Rizzo, N.D. ; Slaughter, J.M. ; Smith, K. ; Sun, J.J. ; Tehrani, S.
Author_Institution :
Freescale Semicond., Chandler, AZ
Abstract :
A 4-Mb magnetoresistive random access memory (MRAM) with a novel magnetic bit cell and toggle switching mode is presented. The circuit was designed in a five level metal, 0.18-mum complementary metal-oxide-semiconductor process with a bit cell size of 1.55 mum2. The new bit cell uses a balanced synthetic antiferromagnetic free layer and a phased write pulse sequence to provide robust switching performance with immunity from half-select disturbs. This switching mode greatly improves the operational performance of the MRAM as compared to conventional MRAM. A detailed description of this 4-Mb toggle MRAM is presented
Keywords :
CMOS memory circuits; magnetic storage; magnetic switching; magnetic thin films; magnetic tunnelling; magnetoresistive devices; micromagnetics; random-access storage; 0.18 micron; 4 Mbit; balanced synthetic antiferromagnetic free layer; complementary metal-oxide-semiconductor process; half-select disturb immunity; magnetic bit cell; magnetic film memories; magnetic tunnel junction; magnetoresistive device; magnetoresistive random access memory; micromagnetic switching; phased write pulse sequence; toggle MRAM; toggle switching mode; CMOS technology; Circuits; Electric resistance; Magnetic flux; Magnetic materials; Magnetic semiconductors; Magnetic separation; Magnetic switching; Magnetic tunneling; Random access memory; MRAM integration; Magnetic film memories; magnetic tunnel junction; magnetoresistive device; magnetoresistive random access memory (MRAM); micromagnetic switching; random access memories (RAMs);
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2004.840847
