An application of cathodoluminescence to optimize the shallow trench isolation process

Author

Mizukoshi, Toshikazu ; Shibusawa, Katsuhiko ; Yo, Shoji ; Sugie, Ryuichi ; Ajioka, Tsuneo

Author_Institution

Miyagi-Oki Electr. Co. Ltd., Miyagi, Japan

Volume

18

Issue

4

fYear

2005

Firstpage

546

Lastpage

553

Abstract

Cathodoluminescence (CL) spectroscopy was applied to optimize the shallow trench isolation (STI) process. The analysis of dislocations with CL spectroscopy could be performed during STI process steps. Then, the result of CL analysis was associated with the failure of a junction leakage current. Moreover, the analysis contributed to identifying the failure, including the root cause. As the result of CL analysis, nitride film thickness used as a mask layer of patterning was controlled at 190 nm or less. The dislocation analysis with CL spectroscopy can reduce the cycle time from 50 to 5 days.

Keywords

cathodoluminescence; failure analysis; isolation technology; large scale integration; masks; optimised production technology; spectroscopy; surface treatment; 190 nm; 5 day; cathodoluminescence spectroscopy; dislocation analysis; failure analysis; junction leakage current failure; large scale integration; mask layer; nitride film thickness; optimised production technology; process optimization; shallow trench isolation process; surface treatment; Crystallization; Failure analysis; Large scale integration; Leakage current; Optical films; Optical microscopy; Scanning electron microscopy; Spectroscopy; Testing; Transmission electron microscopy; Cathodoluminescence (CL); D lines; dislocations; shallow trench isolation (STI);

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/TSM.2005.858497

Filename

1528568