Title :
An application of cathodoluminescence to optimize the shallow trench isolation process
Author :
Mizukoshi, Toshikazu ; Shibusawa, Katsuhiko ; Yo, Shoji ; Sugie, Ryuichi ; Ajioka, Tsuneo
Author_Institution :
Miyagi-Oki Electr. Co. Ltd., Miyagi, Japan
Abstract :
Cathodoluminescence (CL) spectroscopy was applied to optimize the shallow trench isolation (STI) process. The analysis of dislocations with CL spectroscopy could be performed during STI process steps. Then, the result of CL analysis was associated with the failure of a junction leakage current. Moreover, the analysis contributed to identifying the failure, including the root cause. As the result of CL analysis, nitride film thickness used as a mask layer of patterning was controlled at 190 nm or less. The dislocation analysis with CL spectroscopy can reduce the cycle time from 50 to 5 days.
Keywords :
cathodoluminescence; failure analysis; isolation technology; large scale integration; masks; optimised production technology; spectroscopy; surface treatment; 190 nm; 5 day; cathodoluminescence spectroscopy; dislocation analysis; failure analysis; junction leakage current failure; large scale integration; mask layer; nitride film thickness; optimised production technology; process optimization; shallow trench isolation process; surface treatment; Crystallization; Failure analysis; Large scale integration; Leakage current; Optical films; Optical microscopy; Scanning electron microscopy; Spectroscopy; Testing; Transmission electron microscopy; Cathodoluminescence (CL); D lines; dislocations; shallow trench isolation (STI);
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
DOI :
10.1109/TSM.2005.858497
