DocumentCode :
1209611
Title :
Effects of In Situ 
Plasma Treatment on off -State Leakage and Reliability i
Author :
Lee, Kyong Taek ; Kang, Chang Yong ; Ju, Byung Sun ; Choi, Rino ; Min, Kyung Seok ; Yoo, Ook Sang ; Lee, Byoung Hun ; Jammy, Raj ; Lee, Jack C. ; Lee, Hi-Deok ; Jeong, Yoon-Ha
Author_Institution :
SEMATECH, Austin, TX
Volume :
29
Issue :
6
fYear :
2008
fDate :
6/1/2008 12:00:00 AM
Firstpage :
565
Lastpage :
567
Abstract :
The effects of in situ O2 plasma treatment on device characteristics and reliability of metal-gate/high-k devices are investigated systematically. It was found that the O2 plasma treatment can be employed for mitigating the formation of a leakage path between the high-k dielectric and the capping nitride layer. It also did not change the threshold voltage (Vth), carrier mobility, or equivalent oxide thickness. Compared with the control samples, the O2 plasma-treated samples achieved a 20-times lower OFF-state current and enhanced hot-carrier-injection stress immunity.
Keywords :
MOSFET; integrated circuit reliability; MOSFET reliability; OFF-state leakage; carrier mobility; hot-carrier-injection stress immunity; metal-gate/high-k devices; plasma treatment; plasma-treated samples; threshold voltage; Gate-induced drain leakage (GIDL); hot-carrier reliability; in situ $hbox{O}_{2}$ plasma; in situ $hbox{O}_{2}$ $k$ ; metal-gate/high-$k$; plasma-induced damage (PID);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2008.922992
Filename :
4510758
Link To Document :
