DocumentCode :
1209630
Title :
Supervisory control of LPCVD silicon nitride
Author :
Patel, Nital S. ; Rajadhyaksha, Amit ; Boone, James D.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Volume :
18
Issue :
4
fYear :
2005
Firstpage :
584
Lastpage :
591
Abstract :
This paper presents a scheme for deposition time and temperature control of low pressure chemical vapor deposition silicon nitride off product wafers. A Kalman filter based estimation scheme is presented for deposition time control. Deposition temperature control is treated in additional detail, including the impact of sampling the furnace load. Furthermore, stability metrics are also derived capturing the allowable modeling error for ensuring closed-loop stability. This is important for enabling the same model to be used across multiple tools and processes. A two-step iterative scheme is presented for implementing a "batch as you go" controller. Finally, the controller is applied in high-volume production.
Keywords :
Kalman filters; chemical vapour deposition; closed loop systems; control of specific variables; iterative methods; process control; semiconductor device manufacture; silicon compounds; stability; surface treatment; temperature control; Kalman filters; LPCVD silicon nitride; closed-loop stability; deposition temperature control; deposition time control; iterative methods; low pressure chemical vapor deposition; process control; supervisory control; surface treatment; Chemical vapor deposition; Furnaces; Monitoring; Robust control; Robust stability; Sampling methods; Semiconductor device modeling; Silicon; Supervisory control; Temperature control; low-pressure chemical vapor deposition (LPCVD); robustness; run-to-run control; sampling; silicon nitride;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/TSM.2005.858504
Filename :
1528573
Link To Document :
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