Title :
An analytical model for LDD drain structures
Author_Institution :
Honeywell Inc., Plymouth, MN, USA
fDate :
7/1/1988 12:00:00 AM
Abstract :
An approximate analytical model for short-channel IGFET (isolated-gate field-effect transistor) LDD structures in saturation is developed from a quasi-two-dimensional analysis under the assumption of a nonvanishing field derivative at the pinchoff point. The differences between this model and existing model are compared. It is suggested that the model is useful in determining the location of the pinchoff point, whereby the effect of channel-length modulation can be assessed
Keywords :
insulated gate field effect transistors; semiconductor device models; LDD drain structures; analytical model; channel-length modulation; field-effect transistor; isolated-gate; pinchoff point; quasi 2D analysis; quasi-two-dimensional analysis; saturation; short-channel IGFET; Analytical models; Channel bank filters; Differential equations; FETs; Neodymium; Numerical simulation; P-n junctions; Poisson equations; Threshold voltage; Virtual reality;
Journal_Title :
Electron Devices, IEEE Transactions on
