• DocumentCode
    1210005
  • Title

    Performance of Silicon Surface Barrier Detectors with Charge Sensitive Amplifiers

  • Author

    Blankenship, J.L. ; Borkowski, C.J.

  • Author_Institution
    Instrumentation and Controls Division Oak Ridge National Laboratory Oak Ridge, Tennessee
  • Volume
    8
  • Issue
    1
  • fYear
    1961
  • Firstpage
    17
  • Lastpage
    20
  • Abstract
    Silicon surface barrier diode detectors of 1 cm2 and 25 mm2 sensitive area have given pulse height spectral resolutions of 17 kev and 13-¿ kev (FWHM) respectively, for 5.5 mev alpha particles. Reverse currents at 500 volts bias were less than 1 × 10-6 amps/cm2 with breakdown in excess of 1000 volts. A charge sensitive amplifier contributes 3-¿ and 10 kev noise (FWHM) with an input capacitive loading of 20 and 180 pf respectively.
  • Keywords
    Energy resolution; Envelope detectors; P-n junctions; Pulse amplifiers; Radiation detectors; Semiconductor device noise; Semiconductor diodes; Silicon; Surface fitting; Surface treatment;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IRE Transactions on
  • Publisher
    ieee
  • ISSN
    0096-2015
  • Type

    jour

  • DOI
    10.1109/TNS2.1961.4315793
  • Filename
    4315793
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1210005