DocumentCode :
1210117
Title :
Flexible dv/dt and di/dt control method for insulated gate power switches
Author :
Park, Shihong ; Jahns, Thomas M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Wisconsin, Madison, WI, USA
Volume :
39
Issue :
3
fYear :
2003
Firstpage :
657
Lastpage :
664
Abstract :
Active gate control techniques are introduced in this paper for flexibly and independently controlling the dv/dt and di/dt of insulated gate power devices during hard-switching events. In the case of dv/dt control, the output voltage dv/dt can be controlled over a wide range by electronically adjusting the effective gate-to-drain (-collector) capacitance (i.e., Miller capacitance). For di/dt control, similar techniques are applied for electronically adjusting the output current di/dt over a wide range using voltage feedback from a small inductor connected in series with the switch´s source (emitter) terminal. Both techniques are designed to maximize their compatibility with power module implementations that combine the power switch and its gate drive, including integrated circuit gate drives. Simulation and experimental results are included to verify the desirable performance characteristics of the presented dv/dt and di/dt control techniques.
Keywords :
capacitance; electric current control; insulated gate bipolar transistors; modules; power semiconductor switches; switching; voltage control; active gate control techniques; di/dt control; driver circuits; dv/dt control; gate-to-drain capacitance adjustment; hard-switching events; insulated gate power switches; integrated circuit gate drives; output voltage control; power module implementations; voltage feedback; Capacitance; Electromagnetic interference; Inductors; Insulated gate bipolar transistors; Insulation; MOSFETs; Multichip modules; Output feedback; Switching circuits; Voltage control;
fLanguage :
English
Journal_Title :
Industry Applications, IEEE Transactions on
Publisher :
ieee
ISSN :
0093-9994
Type :
jour
DOI :
10.1109/TIA.2003.810654
Filename :
1201531
Link To Document :
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