High-performance p-channel poly-Si TFT´s using electron cyclotron resonance hydrogen plasma passivation

Author

Yin, Aiguo ; Fonash, Stephen J.

Author_Institution

Lab. of Electron. Mater. & Process. Res., Pennsylvania State Univ., University Park, PA, USA

Volume

15

Issue

12

fYear

1994

Firstpage

502

Lastpage

503

Abstract

This letter presents a summary of the first detailed investigation of electron cyclotron resonance (ECR) hydrogen plasma exposure treatments of p-channel poly-Si thin film transistors (TFT´s). It is shown that ECR hydrogenation can be much more efficient than RF hydrogenation. Poly-Si p-channel TFT´s fabricated at low temperatures (/spl les/625/spl deg/C) and passivated with the ECR hydrogenation treatment are shown to exhibit ON/OFF current ratios of 7.6/spl times/10/sup 7/, subthreshold swings of 0.62 V/decade, threshold voltages of -4.6 V, and hole mobilities over 18 cm/sup 2//V.s.<>

Keywords

hole mobility; hydrogen; passivation; plasma applications; semiconductor technology; silicon; thin film transistors; 625 C; ECR hydrogenation; ON/OFF current ratios; Si:H; electron cyclotron resonance hydrogen plasma passivation; hole mobilities; low temperature fabrication; p-channel poly-Si thin film transistors; subthreshold swings; threshold voltages; Cyclotrons; Electrons; Hydrogen; Plasma devices; Plasma properties; Plasma temperature; Radio frequency; Resonance; Substrates; Thin film transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.338417

Filename

338417