Title :
A dynamic threshold voltage MOSFET (DTMOS) for very low voltage operation
Author :
Assaderaghi, Fariborz ; Parke, Stephen ; Sinitsky, Dennis ; Bokor, Jeffrey ; Ko, Ping K. ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
A new mode of operation for Silicon-On-Insulator (SOI) MOSFET is experimentally investigated. This mode gives rise to a Dynamic Threshold voltage MOSFET (DTMOS). DTMOS threshold voltage drops as gate voltage is raised, resulting in a much higher current drive than regular MOSFET at low V/sub dd/. On the other hand, V/sub t/ is high at V/sub gs/=0, thus the leakage current is low. Suitability of this device for ultra low voltage operation is demonstrated by ring oscillator performance down to V/sub dd/=0.5 V.<>
Keywords :
MOSFET; carrier mobility; leakage currents; silicon-on-insulator; 0.5 V; DTMOS; MOSFET; SOI MOSFET; Si; current drive; dynamic threshold voltage; gate voltage; leakage current; very low voltage operation; Contacts; Degradation; Digital systems; Leakage current; Low voltage; MOSFET circuits; Power supplies; Ring oscillators; Silicon on insulator technology; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
