Title :
Effects of controlled texturization of the crystalline Si surface on the SiO/sub 2//Si effective barrier height
Author :
Kwok, Chee Yee ; Williams, Anne ; Gross, Mark ; Gauja, Eric ; Kong, Sik On
Author_Institution :
Dept. of Electron., New South Wales Univ., Sydney, NSW, Australia
Abstract :
A two-stage plasma etch texturination process to control the level of crystalline silicon surface roughness has been investigated. Initially, a Cl/sub 2/ plasma etch is used to produce a very rough Si surface. This is followed by an isotropic SF/sub 6/ plasma etch, whose etch time is used to reduce and control the level of surface roughness created by the previous step. Oxides grown on texturized Si surfaces with short SF/sub 6/ etch times exhibit lower effective SiO/sub 2//Si barrier height and greater electron injection enhancement than those with longer SF/sub 6/ etch times.<>
Keywords :
elemental semiconductors; semiconductor technology; semiconductor-insulator boundaries; silicon; silicon compounds; sputter etching; surface texture; surface topography; Cl/sub 2/; Cl/sub 2/ plasma etch; SF/sub 6/; Si; SiO/sub 2/-Si; SiO/sub 2//Si effective barrier height; controlled texturization; crystalline Si surface; electron injection enhancement; isotropic SF/sub 6/ plasma etch; surface roughness; two-stage plasma etch; Crystallization; Electrons; Etching; Plasma applications; Rough surfaces; Silicon; Sulfur hexafluoride; Surface roughness; Surface texture; Voltage;
Journal_Title :
Electron Device Letters, IEEE
