DocumentCode
1210783
Title
Comments on "Charge-control MODFET model" [with reply]
Author
Baek, Jeihoon ; Shur, M. ; Snowden, C.M.
Author_Institution
Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
Volume
35
Issue
7
fYear
1988
fDate
7/1/1988 12:00:00 AM
Firstpage
1162
Lastpage
1163
Abstract
For the original article see ibid., vol.ED-34, no.8, p.1617-25, 1987. The commenters compare the nonlinear modulation-doped field-effect transistor (MODFET) model proposed by W.A. Hughes and C.M. Snowden with a simple charge-control model developed previously. They demonstrate that these models agree quite well and that the disagreement found by Hughes and Snowden was due to an additional assumption of the complete velocity saturation in the MODFET channel. In reply, Snowden agrees and develops the point further.<>
Keywords
high electron mobility transistors; semiconductor device models; HEMT; MODFET channel; charge-control model; field-effect transistor; modulation-doped; nonlinear MODFET model; velocity saturation; Analytical models; Circuit simulation; Electron mobility; Epitaxial layers; FETs; HEMTs; Integrated circuit modeling; MODFETs; Threshold voltage; Transconductance;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.3385
Filename
3385
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