Title :
Cryogenic wide-band ultra-low-noise IF amplifiers operating at ultra-low DC power
Author :
Wadefalk, Niklas ; Mellberg, Anders ; Angelov, Iltcho ; Barsky, Michael E. ; Bui, Stacey ; Choumas, Emmanuil ; Grundbacher, Ronald W. ; Kollberg, Erik Ludvig ; Lai, Richard ; Rorsman, Niklas ; Starski, Piotr ; Stenarson, Jörgen ; Streit, Dwight C. ; Zirat
Author_Institution :
Electr. Eng. Dept., California Inst. of Technol., Pasadena, CA, USA
fDate :
6/1/2003 12:00:00 AM
Abstract :
This paper describes cryogenic broad-band amplifiers with very low power consumption and very low noise for the 4-8-GHz frequency range. At room temperature, the two-stage InP-based amplifier has a gain of 27 dB and a noise temperature of 31 K with a power consumption of 14.4 mW per stage, including bias circuitry. When cooled to 15 K, an input noise temperature of 1.4 K is obtained at 5.7 mW per stage. At 0.51 mW per stage, the input noise increases to 2.4 K. The noise measurements have been repeated at different laboratories using different methods and are found consistent.
Keywords :
HEMT circuits; cryogenic electronics; indium compounds; integrated circuit noise; intermediate-frequency amplifiers; low-power electronics; microwave amplifiers; microwave integrated circuits; wideband amplifiers; 0.51 to 14.4 mW; 2.4 to 31 K; 27 dB; 4 to 8 GHz; HEMT LNA; InP; InP-based HEMTs; Rogers Durold substrate; bias circuitry; cryogenic broad-band amplifiers; hybrid MIC technology; low power consumption; low-noise amplifier; noise temperature; two-stage InP-based amplifier; ultra-low DC power; ultra-low-noise IF amplifiers; very low noise operation; wideband IF amplifiers; Broadband amplifiers; Circuit noise; Cryogenics; Energy consumption; Frequency; Gain; Low-noise amplifiers; Power amplifiers; Temperature; Ultra wideband technology;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2003.812570