Title :
Phototransistors based on InP HEMTs and their applications to millimeter-wave radio-on-fiber systems
Author :
Choi, Chang-Soon ; Kang, Hyo-Soon ; Choi, Woo-Young ; Kim, Dae-Hyun ; Seo, Kwang-Seok
Author_Institution :
Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea
Abstract :
Phototransistors based on InP high electron-mobility transistors (HEMTs) are investigated for millimeter-wave radio-on-fiber system applications. By clarifying the photodetection mechanism in InP HEMTs, the phototransistor internal gain is determined. We present their use as millimeter-wave harmonic optoelectronic mixers and characterize them at the 60-GHz band. In order to evaluate the InP HEMT optoelectronic mixer performance, internal conversion gain is introduced and a maximum of 17 dB is obtained for 60-GHz harmonic optoelectronic up-conversion. Utilizing them, we construct a 60-GHz radio-on-fiber system and demonstrate 622-Mb/s data transmission over 30-km single-mode fiber and 3-m free space at 60-GHz band.
Keywords :
III-V semiconductors; data communication; high electron mobility transistors; indium compounds; microwave photonics; millimetre wave mixers; optical communication equipment; optical fibre communication; phototransistors; 3 m; 30 km; 60 GHz; 622 Mbit/s; InP; InP HEMT; InP high electron mobility transistors; data transmission; harmonic optoelectronic upconversion; internal conversion gain; millimeter wave harmonic optoelectronic mixers; millimeter wave radio-on-fiber systems; photodetection mechanism; phototransistor internal gain; single mode fiber; Base stations; Central office; Frequency; HEMTs; Indium phosphide; MODFETs; Millimeter wave technology; Millimeter wave transistors; Optical scattering; Phototransistors;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2004.839323
