Title :
A highly efficient Doherty feedforward linear power amplifier for W-CDMA base-station applications
Author :
Cho, Kyoung-Joon ; Kim, Jong-Heon ; Stapleton, Shawn P.
Author_Institution :
Dept. of Radio Sci. & Eng., Kwangwoon Univ., Seoul, South Korea
Abstract :
This paper presents a RF high-power Doherty amplifier for improving the efficiency of a 30-W feedforward linear amplifier used in wide-band code-division multiple-access (W-CDMA) base-station applications. A high-power Doherty amplifier using a single push-pull LDMOS field-effect transistor is proposed as the main amplifier of a feedforward linear amplifier. The peaking amplifier´s compensation line and gate bias effects are analyzed at the 6-dB backoff point. From the experimental results of a forward-link one-carrier W-CDMA, a 2.2% power-added efficiency improvement at an adjacent channel leakage power ratio linearity of -60 dBc is achieved in comparison to a conventional feedforward class-AB amplifier.
Keywords :
broadband networks; code division multiple access; microwave field effect transistors; microwave links; microwave power amplifiers; power MOSFET; transceivers; -60 dB; 30 W; 6 dB; RF high power Doherty amplifier; W-CDMA base station applications; adjacent channel leakage power ratio; forward link one carrier W-CDMA; gate bias effects; highly efficient Doherty feedforward linear power amplifier; peaking amplifier compensation line; power added efficiency; push-pull LDMOS field effect transistor; wide band code division multiple access base station; Broadband amplifiers; High power amplifiers; Linearity; Multiaccess communication; Peak to average power ratio; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Repeaters;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2004.839341
