Direct extraction of InP HBT noise parameters based on noise-figure measurement system

Author

Gao, Jianjun ; Li, Xiuping ; Jia, Lin ; Wang, Hong ; Boeck, Georg

Author_Institution

Inst. for High-Frequency & Semicond. Syst. Technol., Tech. Univ. Berlin, Germany

Volume

53

Issue

1

fYear

2005

Firstpage

330

Lastpage

335

Abstract

A new method for the determination of the four noise parameters of an InP double heterojunction bipolar transistor (DHBT) based on a 50-Ω noise measurement system without a microwave tuner is presented. The noise parameters are determined based on the noise correlation matrix technique by fitting the measured noise figure of the active device. On-wafer experimental verification up to 20 GHz is presented and a comparison with a tuner based method is given. Good agreement is obtained between measured and calculated results up to 20 GHz for the InP/InGaAs DHBT with a 1.6×20 μm² emitter over a wide range of bias points.

Keywords

III-V semiconductors; correlation methods; gallium arsenide; heterojunction bipolar transistors; indium compounds; noise measurement; semiconductor device measurement; semiconductor device noise; tuning; 50 ohm; InP HBT noise parameters; InP double heterojunction bipolar transistor; InP-InGaAs; InP-InGaAs DHBT; active device; microwave tuner; noise correlation matrix technique; noise figure; noise figure measurement system; parameter extraction; Active noise reduction; Double heterojunction bipolar transistors; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Microwave devices; Microwave theory and techniques; Noise figure; Noise measurement; Tuners;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2004.839919

Filename

1381705