Title :
Direct extraction of InP HBT noise parameters based on noise-figure measurement system
Author :
Gao, Jianjun ; Li, Xiuping ; Jia, Lin ; Wang, Hong ; Boeck, Georg
Author_Institution :
Inst. for High-Frequency & Semicond. Syst. Technol., Tech. Univ. Berlin, Germany
Abstract :
A new method for the determination of the four noise parameters of an InP double heterojunction bipolar transistor (DHBT) based on a 50-Ω noise measurement system without a microwave tuner is presented. The noise parameters are determined based on the noise correlation matrix technique by fitting the measured noise figure of the active device. On-wafer experimental verification up to 20 GHz is presented and a comparison with a tuner based method is given. Good agreement is obtained between measured and calculated results up to 20 GHz for the InP/InGaAs DHBT with a 1.6×20 μm2 emitter over a wide range of bias points.
Keywords :
III-V semiconductors; correlation methods; gallium arsenide; heterojunction bipolar transistors; indium compounds; noise measurement; semiconductor device measurement; semiconductor device noise; tuning; 50 ohm; InP HBT noise parameters; InP double heterojunction bipolar transistor; InP-InGaAs; InP-InGaAs DHBT; active device; microwave tuner; noise correlation matrix technique; noise figure; noise figure measurement system; parameter extraction; Active noise reduction; Double heterojunction bipolar transistors; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Microwave devices; Microwave theory and techniques; Noise figure; Noise measurement; Tuners;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2004.839919
