Title :
Comments on "Microwave noise modeling for InP-InGaAs HBTs"
Author :
Escotte, Laurent ; Graffeuil, Jacques
Abstract :
For original article by J. Gao, X. Li, H. Wang and G. Boeck see ibid., vol.52, no.4, p.1624-72, April 2004.
Keywords :
III-V semiconductors; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor device models; semiconductor device noise; HBT; InP-InGaAs; microwave noise modeling; small-signal equivalent circuit; Circuit noise; Circuit topology; Differential equations; Electric resistance; Equivalent circuits; Frequency dependence; Heterojunction bipolar transistors; Microwave circuits; Noise figure; Temperature;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2004.839954
