Title :
Authors\´ reply [to Comments on "Microwave noise modeling for InP-InGaAs HBTs"]
Author :
Jianjun Gao ; Xiuping Li ; Hong Wang ; Boeck, Georg
Author_Institution :
Inst. of High-Frequency & Semicond. Syst. Technol., Tech. Univ. Berlin, Germany
Abstract :
For original article by J. Gao, X. Li, H. Wang, and G. Boeck see ibid., vol.52, no.4, p.1624-72, April 2004. For comments by L. Escotte and J. Graffeuil see ibid., vol.53, no.1, p.415-16, January 2005.
Keywords :
III-V semiconductors; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor device models; semiconductor device noise; HBT; InP-InGaAs; microwave noise modelling; small-signal equivalent circuit; Bipolar transistors; Degradation; Electron devices; Heterojunctions; Measurement errors; Microwave devices; Semiconductor device noise;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2004.839959
