• DocumentCode
    1211650
  • Title

    The Window Thickness of Diffused Junction Detectors

  • Author

    Williams, R.L. ; Webb, P.P.

  • Author_Institution
    RCA Victor Research Laboratories Montreal, Canada
  • Volume
    9
  • Issue
    3
  • fYear
    1962
  • fDate
    6/1/1962 12:00:00 AM
  • Firstpage
    160
  • Lastpage
    166
  • Abstract
    The detector window thicknesses for carrier gas diffusions have been found to be very close to 1/2 the diffusion depths. This result is interpreted in terms of the concentration profile of the diffusant. In the surface region, where the impurity concentration is greater than 1018 per c.c., the carrier lifetime becomes so small that ionized charges recombine before they can diffuse to the junction. With reduced surface concentrations, window thicknesses of less than 1/2 the diffusion depth have been fabricated, but good voltage rating diodes with a window thickness of less than 0.1 micron (.025 mg/cm2) are yet to be realized. For all diffusion depths a non-noise resolution limit of devices has been observed which corresponds to approximately 1/3 the energy loss of an incident particle in the window layer of diodes. For paint-on diffusion detectors, the nominal 900°C - 10 minutes - 0.1 microns diffusion units have measured window thicknesses of about 0.3 microns. For the process studied it appears that an excessive amount of phosphorus is incorporated into the surface layer.
  • Keywords
    Charge carrier lifetime; Detectors; Diodes; Energy loss; Energy resolution; Impurities; Laboratories; Measurement units; Semiconductor counters; Voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IRE Transactions on
  • Publisher
    ieee
  • ISSN
    0096-2015
  • Type

    jour

  • DOI
    10.1109/TNS2.1962.4315988
  • Filename
    4315988