Title :
New Test Structure to Monitor Contact-to-Poly Leakage in Sub-90 nm CMOS Technologies
Author :
King, Ming-Chu ; Chin, Albert
Author_Institution :
Nat. Chiao-Tung Univ., Hsinchu
fDate :
5/1/2008 12:00:00 AM
Abstract :
The high leakage or even direct short between contact and gate is a serious problem after the feature sizes are shrunk to 65-nm technology and beyond. However, there is no suitable test structure to effectively monitor the leakage current between them. We have designed a new test structure which can eliminate the drawbacks of existing test structures and effectively monitor the leakage current between contact and gate electrode in state-of-the-art CMOS process technology.
Keywords :
CMOS integrated circuits; integrated circuit testing; leakage currents; CMOS process technology; contact electrode; contact-to-poly leakage; gate electrode; leakage current; size 65 nm; size 90 nm; test structure; CMOS process; CMOS technology; Electrodes; Gate leakage; Leakage current; Manufacturing processes; Monitoring; Process control; Testing; Voltage; Contact; gate; leakage current; test structure;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
DOI :
10.1109/TSM.2008.2000267
