Bandgap shifted InGaAsP/InP quantum well waveguides using MeV ion implantation

Author

He, J.J. ; Feng, Y. ; Koteles, S. ; Poole, P.J. ; Davis, M. ; Dion, M. ; Goldberg, R. ; Mitchell, I. ; Charbonneau, S.

Author_Institution

Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada

Volume

31

Issue

24

fYear

1995

fDate

11/23/1995 12:00:00 AM

Firstpage

2094

Lastpage

2095

Abstract

A large blue shift of the bandgap 90 nm, in an InGaAsP/InP quantum well (QW) p-i-n laser structure using a single-step MeV phosphorous ion implantation is reported. The absorption constant at the original band-edge was reduced from 110 cm^-1 to only 4 cm^-1. No excess loss in the waveguide due to the QW intermixing process was observed. Current/voltage measurements indicate that junction characteristics are well maintained, providing a means of producing side-by-side active and passive sections using a simple, single processing step on laser structures fabricated using standard growth techniques

Keywords

III-V semiconductors; energy gap; gallium arsenide; gallium compounds; indium compounds; integrated optics; integrated optoelectronics; ion implantation; optical fabrication; optical waveguides; quantum well lasers; waveguide lasers; InGaAsP-InP; MeV ion implantation; OEIC; absorption constant; bandgap shifted optical waveguides; blue shift; junction characteristics; p-i-n laser structure; quantum well waveguides; semiconductor lasers;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19951415

Filename

480728