DocumentCode :
1211821
Title :
Reliability modeling of capacitive RF MEMS
Author :
Mellé, Samuel ; De Conto, David ; Dubuc, David ; Grenier, Katia ; Vendier, Olivier ; Muraro, Jean-Luc ; Cazaux, Jean-Louis ; Plana, Robert
Author_Institution :
Lab. d´´Anal. et d´´Archit. des Syst. Meas., Centre Nat. de la Recherche Scientifique, Toulouse, France
Volume :
53
Issue :
11
fYear :
2005
Firstpage :
3482
Lastpage :
3488
Abstract :
The kinetic of dielectric charging in capacitive RF microelectromechanical systems (RF MEMS) is investigated using an original method of stress and monitoring. This effect is investigated through a new parameter: the shift rate of the actuation voltages. We demonstrate that this lifetime parameter has to be considered as a function of the applied voltage normalized by the contact quality between the bridge and the dielectric. We also demonstrate that this phenomenon is related to Frenkel-Poole conduction, which takes place into the dielectric. We finally propose a model that describes the dielectric charging kinetic in capacitive RF MEMS. This model is used to extract a figure-of-merit of capacitive switches lifetime.
Keywords :
Poole-Frenkel effect; capacitor switching; dielectric properties; electrostatic devices; life testing; microswitches; radiofrequency integrated circuits; reliability; surface charging; Frenkel-Poole conduction; capacitive RF MEMS; capacitive switches; dielectric charging kinetic; lifetime parameter; monitoring; reliability modeling; stress; Bridge circuits; Dielectrics; Kinetic theory; Monitoring; Radio frequency; Radiofrequency microelectromechanical systems; Space technology; Switches; Testing; Voltage; Dielectric charging; Frenkel–Poole conduction; RF microelectromechanical systems (RF MEMS); figure-of-merit (FOM); reliability;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2005.857109
Filename :
1528800
Link To Document :
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