DocumentCode :
1211875
Title :
High-coupling-efficiency laser diodes integrated with spot-size converters fabricated on 2 inch InP substrates
Author :
Wada, M. ; Kohtoku, M. ; Kawano, K. ; Okamoto, H. ; Kadota, Y. ; Kondo, Y. ; Kishi, K. ; Kondo, S. ; Sakai, Y. ; Kotaka, I. ; Noguchi, Y. ; Itaya, Y.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
Volume :
31
Issue :
24
fYear :
1995
fDate :
11/23/1995 12:00:00 AM
Firstpage :
2102
Lastpage :
2104
Abstract :
Laser diodes monolithically integrated with spot-size converters operating at 1.3 μm and having an almost circular far-field pattern and a -1.3 dB butt-coupling-loss-to-fibre with wide alignment tolerance have been successfully fabricated on 2 inch substrates. The overall device length is as short as 450 μm
Keywords :
III-V semiconductors; indium compounds; integrated optics; optical waveguides; quantum well lasers; 1.3 micron; 450 micron; InP; InP substrates; circular far-field pattern; high-coupling-efficiency LD; laser diodes; monolithic integration; spot-size converters; strained MQW;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19951437
Filename :
480734
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1211875
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