• DocumentCode
    1211875
  • Title

    High-coupling-efficiency laser diodes integrated with spot-size converters fabricated on 2 inch InP substrates

  • Author

    Wada, M. ; Kohtoku, M. ; Kawano, K. ; Okamoto, H. ; Kadota, Y. ; Kondo, Y. ; Kishi, K. ; Kondo, S. ; Sakai, Y. ; Kotaka, I. ; Noguchi, Y. ; Itaya, Y.

  • Author_Institution
    NTT Opto-Electron. Labs., Kanagawa, Japan
  • Volume
    31
  • Issue
    24
  • fYear
    1995
  • fDate
    11/23/1995 12:00:00 AM
  • Firstpage
    2102
  • Lastpage
    2104
  • Abstract
    Laser diodes monolithically integrated with spot-size converters operating at 1.3 μm and having an almost circular far-field pattern and a -1.3 dB butt-coupling-loss-to-fibre with wide alignment tolerance have been successfully fabricated on 2 inch substrates. The overall device length is as short as 450 μm
  • Keywords
    III-V semiconductors; indium compounds; integrated optics; optical waveguides; quantum well lasers; 1.3 micron; 450 micron; InP; InP substrates; circular far-field pattern; high-coupling-efficiency LD; laser diodes; monolithic integration; spot-size converters; strained MQW;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19951437
  • Filename
    480734