Title :
Two-dimensional analysis of GTO switching under the influence of external circuit
Author :
Turowski, M. ; Napieralski, A.
Author_Institution :
Inst. of Electron., Tech. Univ. Lodz, Poland
fDate :
12/1/1994 12:00:00 AM
Abstract :
The authors discuss the influence of an external circuit on the internal behaviour of GTO structure and on waveforms in the circuit. Two-dimensional simulations have been performed with realistic RLC loading; the obtained waveforms have been successfully compared with experimental measurements. Computed results show that the peak of power density (i.e., a possible hot spot) remains located in the same place inside the structure throughout the whole turn-off process. The most dangerous voltage and power spikes are caused mainly by parasitic inductances in the external circuit. These results show the importance of GTO structure design as a function of external load conditions and the possibility of hot spots occurring under the cathode contact. The presented numerical results were obtained with a 2D device simulation program, PASS, running on a personal computer
Keywords :
digital simulation; load (electric); power semiconductor switches; switching; thyristors; 2D device simulation program; GTO switching; PASS; RLC loading; cathode contact; circuit waveforms; external circuit influence; external load conditions; hot spots; parasitic inductances; power density peaks; power spikes; turnoff process; two-dimensional analysis;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
DOI :
10.1049/ip-cds:19941393