DocumentCode :
1212105
Title :
Two-dimensional analysis of GTO switching under the influence of external circuit
Author :
Turowski, M. ; Napieralski, A.
Author_Institution :
Inst. of Electron., Tech. Univ. Lodz, Poland
Volume :
141
Issue :
6
fYear :
1994
fDate :
12/1/1994 12:00:00 AM
Firstpage :
483
Lastpage :
488
Abstract :
The authors discuss the influence of an external circuit on the internal behaviour of GTO structure and on waveforms in the circuit. Two-dimensional simulations have been performed with realistic RLC loading; the obtained waveforms have been successfully compared with experimental measurements. Computed results show that the peak of power density (i.e., a possible hot spot) remains located in the same place inside the structure throughout the whole turn-off process. The most dangerous voltage and power spikes are caused mainly by parasitic inductances in the external circuit. These results show the importance of GTO structure design as a function of external load conditions and the possibility of hot spots occurring under the cathode contact. The presented numerical results were obtained with a 2D device simulation program, PASS, running on a personal computer
Keywords :
digital simulation; load (electric); power semiconductor switches; switching; thyristors; 2D device simulation program; GTO switching; PASS; RLC loading; cathode contact; circuit waveforms; external circuit influence; external load conditions; hot spots; parasitic inductances; power density peaks; power spikes; turnoff process; two-dimensional analysis;
fLanguage :
English
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
Publisher :
iet
ISSN :
1350-2409
Type :
jour
DOI :
10.1049/ip-cds:19941393
Filename :
338862
Link To Document :
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