Analytical extraction method for submicron MOS transistor model parameters in the linear region

A novel four-point technique for direct extraction of model parameters of submicron transistors in the linear region is presented. Detailed analytical expressions are given for the extraction procedure. Theoretical sensitivity analysis shows that the influence of measurement noise can be reduced by proper choice of the applied voltages for which the data points are measured. As an example, a sensitivity of only 2% in the threshold voltage was obtained for 1% noise in the four data points. Experiments show that the extracted parameter values are constant within large intervals of applied voltages. Finally, as a generalisation of the direct extraction method, a least-square fitting technique is suggested which offers the user full freedom concerning the number of data points to be used