Title :
Degradation in on-state characteristics of IGBTs through self-heating
Author :
Hu, Z.R. ; Mawby, P.A. ; Towers, M.S. ; Board, K. ; Zeng, J.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. Coll. of Swansea, UK
fDate :
12/1/1994 12:00:00 AM
Abstract :
Numerical studies of thermal effects on the on-state characteristics of IGBTs have been carried out using two-dimensional simulation. A discretisation scheme suitable for electrothermal modelling of semiconductor devices has been derived. The coupled Poisson´s equation and continuity equations together with the heat flow equation are solved self-consistently. The simulation results show that the on-resistance and hence current handling capability of IGBTs can be significantly degraded by their self-heating
Keywords :
insulated gate bipolar transistors; integration; semiconductor device models; temperature distribution; thermal analysis; IGBTs; box integration method; continuity equations; coupled Poisson equation; current handling capability; discretisation scheme; electrothermal modelling; heat flow equation; lattice temperature distribution; numerical studies; on-resistance; on-state characteristics degradation; self-consistent solution; self-heating; thermal effects; two-dimensional simulation;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
DOI :
10.1049/ip-cds:19941392
