• DocumentCode
    1212174
  • Title

    Lithium-Drifted p-i-n Junction Detectors

  • Author

    Mann, H.M. ; Haslett, J.W. ; Janarek, F.J.

  • Author_Institution
    Electronics Division Argonne National Laboratory Argonne, Illinois
  • Volume
    9
  • Issue
    4
  • fYear
    1962
  • Firstpage
    43
  • Lastpage
    54
  • Abstract
    Lithium-ion-drifted diodes were prepared by diffusion of lithium into silicon in vacuo at 350-400°C, followed by electric-field-drift in a silicone oil bath at 150 °C. Extension of the sensitive region toward the p-type surface was interrupted and observed intermittently by means of alpha particles incident upon this surface at three energies in the range of 6 to 9 Mev. Ion-drift was then continued until the plot of pulse height vs energy for these alpha particles showed a negligible (<50 kev) energy intercept for distances of drift up to 4 mm from the lithium-diffused surface. The response to protons at energies from 4.5 to 10 Mev was linear to within ±0.3%. The resolution width (FWHM) for protons at the higher energy, for deuterons at 20 Mev and for alpha particles at 40 Mev was limited by beam energy spread in the Argonne 60-in. cyclotron. At room temperature, resolution widths down to 20 kev were observed for electrons at energies of 500 kev and 1 Mev, and that for gamma rays was 9 kev at 661 kev. Resolution widths down to 12-13 kev were observed for electrons at 1 Mev when the detectors were cooled to liquid nitrogen temperature.
  • Keywords
    Alpha particles; Detectors; Energy resolution; Laboratories; PIN photodiodes; Protons; Semiconductor counters; Semiconductor devices; Semiconductor diodes; Silicon;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IRE Transactions on
  • Publisher
    ieee
  • ISSN
    0096-2015
  • Type

    jour

  • DOI
    10.1109/TNS2.1962.4316045
  • Filename
    4316045