Title :
Computer-aided design of an RF MOSFET power amplifier
Author :
Hoile, G.A. ; Reader, H.C.
Author_Institution :
Dept. of Electron. Eng., Natal Univ., Durban, South Africa
fDate :
12/1/1994 12:00:00 AM
Abstract :
An RF MOSFET power amplifier is designed using linear and nonlinear analysis programs. It includes nonlinear optimisation within a harmonic-balance program. The amplifier has a nominal output of 15 W over the frequency band 118-175 MHz, using a single MOSFET with LC matching elements. The design procedure is described in detail, including the choice of matching networks and stabilising elements as well as the nonlinear optimisation. A nonlinear equivalent-circuit model is used for the RF power MOSFET, while passive-component models take into account the major parasitic effects. The amplifier is constructed directly from the computer-aided design and evaluated. This computer-aided-design approach takes the initial design to a level where only minimal empirical adjustments may be required. A modified procedure is proposed which reduces modelling errors in a final computer-aided design
Keywords :
MOSFET circuits; VHF amplifiers; circuit CAD; circuit optimisation; equivalent circuits; impedance matching; nonlinear network synthesis; power amplifiers; 118 to 175 MHz; 15 W; LC matching elements; RF MOSFET power amplifier; computer-aided design; gradient optimisation routine; harmonic-balance program; linear analysis program; matching networks; modelling errors; nonlinear analysis program; nonlinear equivalent-circuit model; nonlinear optimisation; parasitic effects; passive-component models; stabilising elements;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
DOI :
10.1049/ip-cds:19941397
