DocumentCode
1212212
Title
Statistical BSIM model for MOSFET 1/f noise
Author
Ertürk, M. ; Xia, T. ; Anna, R. ; Newton, K.M. ; Adler, E.
Volume
41
Issue
22
fYear
2005
Firstpage
1208
Lastpage
1210
Abstract
A statistical model for MOSFET 1/f noise implemented as an extension to BSIM and integrated into a process design kit is presented. Excellent model to hardware correlation is shown on measured noise statistics from over 200 devices. The statistical model enables circuit designers to run Monte Carlo and corner noise simulations, and captures the device area and bias dependence of noise variance.
Keywords
1/f noise; MOSFET; Monte Carlo methods; semiconductor device models; semiconductor device noise; statistical analysis; BSIM model; MOSFET 1/f noise; Monte Carlo simulation; corner noise simulation; hardware correlation; process design kit; statistical model;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20052372
Filename
1528842
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