Title :
HEMT millimetre wave monolithic amplifier on InP
Author :
Riaziat, M. ; Pao, Y.C. ; Nishimoto, C. ; Zdasiuk, G. ; Bandy, S. ; Weng, S.L.
Author_Institution :
Varian Res. Center, Palo Alto, CA, USA
Abstract :
A single-stage lossy match cascode amplifier was realised on InP substrate. The amplifier has a small-signal gain of 17+or-1 dB over the frequency range 24-40 GHz. The active device is a 0.25 mu m triangular gate GaInAs/AlInAs HEMT lattice matched to InP.
Keywords :
III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; 0.25 micron; 17 dB; 24 to 40 GHz; GaInAs-AlInAs; HEMT millimetre wave monolithic amplifier; InP; active device; frequency range; single-stage lossy match cascode amplifier; small-signal gain; triangular gate HEMT;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890887
