Title :
1.3 μm quantum dot vertical-cavity surface-emitting laser with external light injection
Author :
Peng, P.C. ; Chang, Y.H. ; Kuo, H.C. ; Tsai, W.K. ; Lin, G. ; Lin, C.T. ; Yu, H.C. ; Yang, H.P. ; Hsiao, R.S. ; Lin, K.F. ; Chi, J.Y. ; Chi, S. ; Wang, S.C.
Author_Institution :
Dept. of Photonics, Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
A 1.3 μm quantum dot vertical-cavity surface-emitting laser (QD VCSEL) with external light injection is presented, having been experimentally demonstrated. The QD VCSEL is fabricated on GaAs substrate. The 3 dB frequency response of the QD VCSEL based on the TO-Can package is enhanced from the free-running 1.75 to 7.44 GHz with the light injection technique.
Keywords :
III-V semiconductors; frequency response; gallium arsenide; quantum dot lasers; surface emitting lasers; 1.3 micron; 1.75 to 7.44 GHz; GaAs; GaAs substrate; QD VCSEL; TO-Can package; external light injection; frequency response; quantum dot lasers; semiconductor laser; vertical-cavity surface-emitting lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20053072
