DocumentCode
1212442
Title
2 W/mm output power density at 1 GHz for diamond FETs
Author
Kasu, M. ; Ueda, K. ; Ye, H. ; Yamauchi, Y. ; Sasaki, S. ; Makimoto, T.
Author_Institution
NTT Basic Res. Labs., NTT Corp., Atsugi, Japan
Volume
41
Issue
22
fYear
2005
Firstpage
1249
Lastpage
1250
Abstract
Great improvement in the output power density of diamond FETs on a diamond homoepitaxial layer grown using a high-purity source gas is reported. For a device with a gate length of 0.1 μm and gate width of 100 μm, at 1 GHz, maximum output power density of 2.1 W/mm, maximum power gain of 10.9 dB, and power added efficiency of 31.8% were obtained.
Keywords
UHF field effect transistors; 0.1 micron; 1 GHz; 10.9 dB; 100 micron; UHF; diamond FET; diamond homoepitaxial layer; field effect transistor; high-purity source gas; power density;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20053194
Filename
1528869
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