Title :
2 W/mm output power density at 1 GHz for diamond FETs
Author :
Kasu, M. ; Ueda, K. ; Ye, H. ; Yamauchi, Y. ; Sasaki, S. ; Makimoto, T.
Author_Institution :
NTT Basic Res. Labs., NTT Corp., Atsugi, Japan
Abstract :
Great improvement in the output power density of diamond FETs on a diamond homoepitaxial layer grown using a high-purity source gas is reported. For a device with a gate length of 0.1 μm and gate width of 100 μm, at 1 GHz, maximum output power density of 2.1 W/mm, maximum power gain of 10.9 dB, and power added efficiency of 31.8% were obtained.
Keywords :
UHF field effect transistors; 0.1 micron; 1 GHz; 10.9 dB; 100 micron; UHF; diamond FET; diamond homoepitaxial layer; field effect transistor; high-purity source gas; power density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20053194
