0.5 THz Performance of a Type-II DHBT With a Doping-Graded and Constant-Composition GaAsSb Base

Author

Huiming Xu ; Wu, Bin ; Iverson, Eric W. ; Low, Thomas S. ; Feng, Ming

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Illinois Urbana-Champaign, Urbana, IL, USA

Volume

35

Issue

1

fYear

2014

fDate

Jan. 2014

Firstpage

24

Lastpage

26

Abstract

A type-II GaAsSb Double Heterojunction Bipolar Transistor (DHBT) with an AlInP emitter, doping-graded GaAsSb base, and InP collector has been grown by molecular beam epitaxy. The 0.38 μm emitter devices have been fabricated by a triple-mesa wet etch process and demonstrated f_T/f_MAX=470/540 GHz at J_C=5.1 mA/μm² and V_CB=0.65 V. This performance is comparable with composition-graded base devices with similar emitter width.

Keywords

III-V semiconductors; aluminium compounds; etching; gallium arsenide; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; semiconductor doping; semiconductor growth; GaAsSb-AlInP-InP; collector; composition-graded base device; constant-composition base; doping-graded base; double heterojunction bipolar transistor; frequency 0.5 THz; frequency 470 GHz; frequency 540 GHz; molecular beam epitaxy; similar emitter width; size 0.38 mum; triple-mesa wet etch process; type-II DHBT; voltage 0.65 V; Doping; Indium phosphide; Integrated circuits; Performance evaluation; Radio frequency; Resistance; Silicon; DHBT; GaAsSb; InP; doping graded; millimeter-wave;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2290299

Filename

6678780