Title :
High transconductance selfaligned WSi gate AlInAs/GaInAs HIGFETs grown by MOCVD
Author :
Kamada, Masaru ; Ishikawa, Hiroshi
Author_Institution :
Sony Corp. Res. Center, Yokohama, Japan
fDate :
7/30/1992 12:00:00 AM
Abstract :
HIGFETs were fabricated using an AlInAs/GaInAs heterostructure grown by MOCVD. The 1 mu m-gate HIGFET showed a maximum transconductance of 740 mS/mm at room temperature, which is the highest transconductance obtained for HIGFETs. The reduction of the AlInAs layer thickness to 30 nm and the low source resistance are the primary reasons for this enhancement.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; insulated gate field effect transistors; semiconductor growth; vapour phase epitaxial growth; 1 micron; 30 nm; 740 mS; AlInAs layer thickness; AlInAs-GaInAs heterostructure; HIGFETs; MOCVD growth; WSi gate; gate length; low source resistance; self aligned transistor; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920949
