• DocumentCode
    1212651
  • Title

    High-performance metal-semiconductor-metal photodetector with a thin hydrogenated amorphous silicon layer on crystalline silicon

  • Author

    Laih, Li-Hong ; Tsay, Wen-Chin ; Chen, Yen-Ann ; Jen, TeanSen ; Yuang, Rong-Heng ; Hong, Jyh-Wong

  • Author_Institution
    Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
  • Volume
    31
  • Issue
    24
  • fYear
    1995
  • fDate
    11/23/1995 12:00:00 AM
  • Firstpage
    2123
  • Lastpage
    2124
  • Abstract
    A thin intrinsic hydrogenated amorphous silicon (i-a-Si:H) layer was used to improve the performance of Si metal-semiconductor-metal photodetectors (MSM-PDs). At a bias of 10 V, this a-Si:H MSM-PD had a rise time of 25 ps and an FWHM of 55 ps for temporal response, a dark current density of 690 fA/μm2, a responsivity of 0.7 A/W and a spectral response peaking at 700 nm
  • Keywords
    amorphous semiconductors; elemental semiconductors; hydrogen; metal-semiconductor-metal structures; photodetectors; silicon; 10 V; 25 ps; 700 nm; FWHM; Si:H-Si; a-Si:H MSM-PD; crystalline silicon; dark current density; hydrogenated amorphous silicon layer; metal-semiconductor-metal photodetector; responsivity; rise time; spectral response; temporal response;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19951417
  • Filename
    480749
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1212651