Title :
High-performance metal-semiconductor-metal photodetector with a thin hydrogenated amorphous silicon layer on crystalline silicon
Author :
Laih, Li-Hong ; Tsay, Wen-Chin ; Chen, Yen-Ann ; Jen, TeanSen ; Yuang, Rong-Heng ; Hong, Jyh-Wong
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
fDate :
11/23/1995 12:00:00 AM
Abstract :
A thin intrinsic hydrogenated amorphous silicon (i-a-Si:H) layer was used to improve the performance of Si metal-semiconductor-metal photodetectors (MSM-PDs). At a bias of 10 V, this a-Si:H MSM-PD had a rise time of 25 ps and an FWHM of 55 ps for temporal response, a dark current density of 690 fA/μm2, a responsivity of 0.7 A/W and a spectral response peaking at 700 nm
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogen; metal-semiconductor-metal structures; photodetectors; silicon; 10 V; 25 ps; 700 nm; FWHM; Si:H-Si; a-Si:H MSM-PD; crystalline silicon; dark current density; hydrogenated amorphous silicon layer; metal-semiconductor-metal photodetector; responsivity; rise time; spectral response; temporal response;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951417
