A monolithic 250 GHz Schottky-diode receiver

Author

Gearhart, Steven S. ; Rebeiz, Gabriel M.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

42

Issue

12

fYear

1994

fDate

12/1/1994 12:00:00 AM

Firstpage

2504

Lastpage

2511

Abstract

A 250 GHz monolithic Schottky-diode receiver based on a double-slot antenna is presented. The double-slot antenna is placed on an extended hemispherical high-resistivity silicon substrate lens. The measured DSB conversion loss and noise temperature at 258 GHz are 7.8±0.3 dB and 1600±100K for the antenna-mixer, respectively. A nonoptimal polyethylene λ_d/4 matching-cap layer for the silicon lens improves the conversion loss and noise temperature by 1 dB, and another 0.7 dB improvement could be obtained with the use of a more optimal matching cap layer. The uniplanar double-slot antenna receiver is less than 0.3×1 mm in size including the IF filter and represents the first fully monolithic 250 GHz receiver to date. The measured performance is within 2-3 dB of the best 200⁺ GHz waveguide receivers using planar Schottky diodes

Keywords

MIMIC; Schottky diode mixers; antenna radiation patterns; coplanar waveguides; gallium arsenide; lens antennas; millimetre wave antennas; millimetre wave mixers; millimetre wave receivers; silicon; slot antennas; 250 to 258 GHz; 7.8 dB; CPW; DSB conversion loss; EHF; GaAs; GaAs wafer; MM-wave operation; Si; antenna-mixer; double-slot antenna; extended hemispherical lens; high-resistivity Si substrate lens; monolithic Schottky-diode receiver; noise temperature; nonoptimal polyethylene matching-cap layer; Antenna measurements; Filters; Lenses; Loss measurement; Noise measurement; Optimal matching; Polyethylene; Receiving antennas; Silicon; Temperature;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.339789

Filename

339789