• DocumentCode
    1212841
  • Title

    Selective epitaxial refill for in-trench device fabrication

  • Author

    Burghartz, J.N. ; Warnock, J.D. ; Mader, S.R. ; Ginsberg, B.J.

  • Author_Institution
    IBM Res. Div., Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
  • Volume
    25
  • Issue
    20
  • fYear
    1989
  • Firstpage
    1337
  • Lastpage
    1338
  • Abstract
    A new technology is presented for in-trench device fabrication using selective epitaxial overgrowth and preferential polishing. The silicon quality is investigated by a comparison of diodes in the centre of the trench, butted to the sides and overlapping the entire trench area. Good results were obtained for centre and butted devices. Ideal characteristics were found also for the overlap diodes, but with lower yield.
  • Keywords
    integrated circuit technology; semiconductor diodes; semiconductor technology; vapour phase epitaxial growth; Si; butted devices; diodes; in-trench device fabrication; overlap diodes; preferential polishing; selective epitaxial overgrowth; selective epitaxial refill; yield;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890893
  • Filename
    33980
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1212841