Title :
Efficiency of baritt and dovett oscillators
Author :
Sitch, J.E. ; Robson, P.N.
Author_Institution :
University of Nottingham, Department of Electrical and Electronic Engineering, Nottingham, UK
fDate :
9/1/1976 12:00:00 AM
Abstract :
The large-signal performance of baritt and dovett (double-velocity transit-time) devices is analysed using an analytical model and computer simulations. The predictions agree well with each other and, in the case of baritts, with experimental results. Efficiencies of more than 25% are predicted for some dovett devices.
Keywords :
digital simulation; electronics applications of computers; microwave oscillators; negative resistance; semiconductor device models; solid-state microwave devices; transit time devices; BARITT devices; DOVETT devices; analytical model; computer simulations; double velocity transit time; large signal performance; microwave oscillators; negative resistance efficiency;
Journal_Title :
Solid-State and Electron Devices, IEE Journal on
DOI :
10.1049/ij-ssed.1976.0005
