• DocumentCode
    1212864
  • Title

    Detection of parasitic potential wells or barriers in bulk-transport charge-coupled devices

  • Author

    Kleefstra, M. ; Heuwekemeijer, P.C.

  • Author_Institution
    Delft University of Technology, Electrical Engineering Department, Delft, Netherlands
  • Volume
    1
  • Issue
    2
  • fYear
    1977
  • fDate
    1/1/1977 12:00:00 AM
  • Firstpage
    46
  • Lastpage
    48
  • Abstract
    For bulk c.c.d.s, the depth of the potential well is obtained by measuring the differential conductance perpendicular to the c.c.d. transfer direction. A test field-effect device, the measuring method and the circuitry are presented. An example shows the ability of the method to detect parasitic potential wells in the transfer direction.
  • Keywords
    charge-coupled devices; bulk transport CCD; differential conductance; parasitic barriers; parasitic potential wells;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Journal on
  • Publisher
    iet
  • ISSN
    0308-6968
  • Type

    jour

  • DOI
    10.1049/ij-ssed.1977.0002
  • Filename
    4807513
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1212864