Title :
Flat-field approximation: a model for drift region in high-efficiency IMPATTS
Author :
Blakey, P.A. ; Culshaw, B. ; Giblin, R.A.
Author_Institution :
University College London, Department of Electronic & Electrical Engineering, London, UK
fDate :
1/1/1977 12:00:00 AM
Abstract :
A model for the drift region of high-efficiency IMPATT diodes is described. Results obtained using the model are presented and demonstrate the existence of important drift-region tuning effects.
Keywords :
IMPATT diodes; drift region model; flat field approximation; high efficiency IMPATT diodes;
Journal_Title :
Solid-State and Electron Devices, IEE Journal on
DOI :
10.1049/ij-ssed.1977.0005
