Title :
Novel monolithic multifunctional balanced switching low-noise amplifiers
Author :
Lo, Dennis C W ; Wang, Huei ; Allen, Barry R. ; Dow, G.S. ; Chang, Kwo Wei ; Biedenbender, Michael ; Lai, Richard ; Chen, Sian ; Yang, Daniel
Author_Institution :
Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
fDate :
12/1/1994 12:00:00 AM
Abstract :
A novel multifunctional balanced switching low-noise amplifier (BSLNA) which can be used as a low-noise amplifier, a low-noise switch, or a broad-band 180° phase shifter is proposed. Two monolithic BSLNA´s at Ka- and W-band frequencies are demonstrated using the 0.1 μm pseudomorphic (PM) InP- and GaAs-based HEMT technologies, respectively. Potential applications of the novel BSLNA are in on-off keying (OFK) or binary phase-shift keying (BPSK) in communication systems and input switch for Dicke-switched radiometer systems. The extensions of this BSLNA structure to be a single-pole double-throw switch and a crossbar switch to interchange two signal paths are also addressed
Keywords :
HEMT integrated circuits; field effect MIMIC; field effect transistor switches; integrated circuit noise; millimetre wave amplifiers; millimetre wave phase shifters; 0.1 mum; 25 to 44 GHz; 3 dB; 5 GHz; 6 dB; 7 dB; 80 to 110 GHz; 92 to 96 GHz; AlGaAs-InGaAs-GaAs; Dicke-switched radiometer systems; GaAs-based HEMT technology; InAlAs-InGaAs-InP; Ka-band; W-band; binary phase-shift keying; broadband 180° phase shifter; communication systems; crossbar switch; input switch; low-noise switch; millimeter wave; monolithic multifunctional balanced switching low-noise amplifiers; on-off keying; pseudomorphic InP HEMT technology; signal path interchange; single-pole double-throw switch; Communication switching; Control systems; FETs; Frequency; HEMTs; Low-noise amplifiers; P-i-n diodes; Phase shifters; Switches; Switching circuits;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
