Title :
A 2 watt, 8-14 GHz HBT power MMIC with 20 dB gain and >40% power-added efficiency
Author :
Ali, Fazal ; Gupta, Aditya ; Salib, Mike ; Veasel, Bradley W. ; Dawson, Dale E.
Author_Institution :
Adv. Technol. Div., Westinghouse Electr. Corp., Baltimore, MD, USA
fDate :
12/1/1994 12:00:00 AM
Abstract :
A two-stage, 8-14 GHz high-efficiency AlGaAs/GaAs HBT MMIC power amplifier has been designed and tested. At 7 V collector bias, this common-emitter monolithic amplifier has achieved 20 dB gain, 33 dBm (CW) output power, and >40% power-added efficiency over the 8-14 GHz band. The amplifier is designed for 25 Ω input and output impedance, and all the matching networks, as well as biasing circuits, are contained within this HBT MMIC. To our knowledge, this is the highest efficiency, the highest gain, and the highest output power reported for any monolithic power amplifier covering a 6 GHz bandwidth in the X-Ku band
Keywords :
III-V semiconductors; MMIC power amplifiers; aluminium compounds; bipolar MMIC; gallium arsenide; heterojunction bipolar transistors; impedance matching; integrated circuit design; microwave power amplifiers; 2 W; 20 dB; 40 percent; 6 GHz; 8 to 14 GHz; AlGaAs-GaAs; AlGaAs/GaAs HBT MMIC power amplifier; CW output power; Ku-band; X-band; amplifier design; biasing circuits; common-emitter monolithic amplifier; high-efficiency; impedance matching networks; power-added efficiency; two-stage amplifier; Bandwidth; Circuit testing; Gain; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Impedance; MMICs; Power amplifiers; Power generation;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
