DocumentCode :
1213112
Title :
Optical losses in O+ and B+ implanted GaAs for stripe laser
Author :
Moutonnet, D.
Author_Institution :
Centre National d´¿¿tudes des T¿¿l¿¿communications, D¿¿partment Physique, Mat¿¿riaux et Technologie, Lannion, France
Volume :
1
Issue :
5
fYear :
1977
fDate :
9/1/1977 12:00:00 AM
Firstpage :
163
Lastpage :
164
Abstract :
Ion implantation is now often used to delineate the stripe geometry of laser diodes. This technique creates some defects and it is important to know the optical properties of the implanted zone. The refractiveindex increase produced by ion implantation in heavily doped material allows optical guiding. So, it is possible to measure the total optical losses of the implanted layer after different heat treatments.
Keywords :
III-V semiconductors; gallium arsenide; ion implantation; semiconductor junction lasers; B+ implanted; GaAs; O+ implanted; ion implantation; laser diodes; optical losses; refractive index; stripe geometry;
fLanguage :
English
Journal_Title :
Solid-State and Electron Devices, IEE Journal on
Publisher :
iet
ISSN :
0308-6968
Type :
jour
DOI :
10.1049/ij-ssed.1977.0025
Filename :
4807539
Link To Document :
بازگشت