Title :
Optical losses in O+ and B+ implanted GaAs for stripe laser
Author_Institution :
Centre National d´¿¿tudes des T¿¿l¿¿communications, D¿¿partment Physique, Mat¿¿riaux et Technologie, Lannion, France
fDate :
9/1/1977 12:00:00 AM
Abstract :
Ion implantation is now often used to delineate the stripe geometry of laser diodes. This technique creates some defects and it is important to know the optical properties of the implanted zone. The refractiveindex increase produced by ion implantation in heavily doped material allows optical guiding. So, it is possible to measure the total optical losses of the implanted layer after different heat treatments.
Keywords :
III-V semiconductors; gallium arsenide; ion implantation; semiconductor junction lasers; B+ implanted; GaAs; O+ implanted; ion implantation; laser diodes; optical losses; refractive index; stripe geometry;
Journal_Title :
Solid-State and Electron Devices, IEE Journal on
DOI :
10.1049/ij-ssed.1977.0025