Title :
Sharp 1.54 μm luminescence from porous erbium implanted silicon
Author :
Taskin, T. ; Gardelis, S. ; Evans, J.H. ; Hamilton, B. ; Peaker, A.R.
Author_Institution :
Inst. of Sci. & Technol., Manchester Univ., UK
fDate :
11/23/1995 12:00:00 AM
Abstract :
Sharp luminescence at 1.54 μm from erbium doped porous silicon has been observed. The silicon was made porous after implantation of high doses of erbium and oxygen into p-type Czochralski silicon. The erbium related luminescence from porous silicon is an order of magnitude more intense than that from erbium doped single crystal silicon
Keywords :
elemental semiconductors; erbium; ion implantation; photoluminescence; porous materials; silicon; 1.54 micron; Si:Er; luminescence; p-type Czochralski silicon; porous erbium implanted silicon;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951439
