• DocumentCode
    1213214
  • Title

    Sharp 1.54 μm luminescence from porous erbium implanted silicon

  • Author

    Taskin, T. ; Gardelis, S. ; Evans, J.H. ; Hamilton, B. ; Peaker, A.R.

  • Author_Institution
    Inst. of Sci. & Technol., Manchester Univ., UK
  • Volume
    31
  • Issue
    24
  • fYear
    1995
  • fDate
    11/23/1995 12:00:00 AM
  • Firstpage
    2132
  • Lastpage
    2133
  • Abstract
    Sharp luminescence at 1.54 μm from erbium doped porous silicon has been observed. The silicon was made porous after implantation of high doses of erbium and oxygen into p-type Czochralski silicon. The erbium related luminescence from porous silicon is an order of magnitude more intense than that from erbium doped single crystal silicon
  • Keywords
    elemental semiconductors; erbium; ion implantation; photoluminescence; porous materials; silicon; 1.54 micron; Si:Er; luminescence; p-type Czochralski silicon; porous erbium implanted silicon;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19951439
  • Filename
    480755
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1213214