Title :
Degradation studies of sawn-cavity (GaAl) As/GaAs-heterostructure lasers under pulsed operation
Author :
Henshall, G.D. ; Hinton, R.E.P.
Author_Institution :
Standard Telecommunication Laboratories Limited, Materials and Components Laboratory, Harlow, UK
fDate :
1/1/1978 12:00:00 AM
Abstract :
Rapid degradation sometimes observed in sawn-cavity (GaAl) As/GaAs-heterostructure lasers under pulsed operation has been found to be primarily due to damage introduced during sawing. Dislocation networks are generated, which propagate through the active layer during operation, leading to the growth of nonradiative recombination areas. The degradation rate was found to be superlinearly dependent on current. Lasers fabricated by deep-proton isolation, which introduces no mechanical damage, did not degrade rapidly.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; degradation; nonradiative recombination areas; pulsed operation; sawing; sawn cavity (GaAl)As/GaAs heterostructure lasers;
Journal_Title :
Solid-State and Electron Devices, IEE Journal on
DOI :
10.1049/ij-ssed.1978.0004