Title :
Submicron silicon bipolar master-slave D-type flip-flop for use as 8.1 Gbit/s decision circuit and 11.2 Gbit/s demultiplexer
Author :
Runge, K. ; Gimlett, J.L. ; Clawin, D. ; Way, W. ; Cheung, N.K. ; Kipnis, I. ; Snapp, C.
Author_Institution :
Bellcore, Red Bank, NJ, USA
Abstract :
The authors have designed and implemented a submicron silicon bipolar master-slave D-type flip-flop integrated circuit which can be used either as a decision circuit or a demultiplexer, operating at data rates as high as 8.1 and 11.2 Gbit/s, respectively. The circuit was fabricated using a 0.6 mu m, nonpolysilicon emitter technology, occupying an area of 0.8 mm*0.9 mm, and dissipating 410 mW of power.
Keywords :
bipolar integrated circuits; flip-flops; integrated logic circuits; multiplexing equipment; optical communication equipment; 0.6 micron; 11.2 Gbit/s; 410 mW; 8.1 Gbit/s; data rates; decision circuit; demultiplexer; lightwave communication; master-slave D-type flip-flop; nonpolysilicon emitter technology; power dissipation; submicron bipolar IC;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890899
