Title :
Dynamics of self focusing in stripe-geometry semiconductor lasers
Author :
Selway, P.R. ; Kirkby, P.A. ; Goodwin, A.R. ; Thompson, G.H.B.
Author_Institution :
Standard Telecommunication Laboratories Ltd., Harlow, UK
fDate :
1/1/1978 12:00:00 AM
Abstract :
The dielectric-waveguide properties of stripe-geometry semiconductor lasers can be deduced by measuring the output-beam shape in the vicinity of the laser facet. Time-resolved near-field measurements have been made on 20¿¿m wide SiO2insulated-stripe lasers and the results used to calculate the time-varying gain and refractive-index profiles during the intial part of a lasing pulse. The effects of self focusing due to the transverse distribution of injected carriers can clearly be observed.
Keywords :
optical waveguides; self-focusing; semiconductor junction lasers; dielectric waveguide properties; injected carriers; laser facet; self focusing; stripe geometry semiconductor lasers; time resolved near field measurements; transverse distribution;
Journal_Title :
Solid-State and Electron Devices, IEE Journal on
DOI :
10.1049/ij-ssed.1978.0005
