Title :
Thermal-resistance models for proton-isolated double-heterostructure lasers
Author :
Newman, D.H. ; Bond, D.J. ; Stefani, Jane
Author_Institution :
General Post Office, PO Telecommunications Research Centre, Ipswich, UK
fDate :
3/1/1978 12:00:00 AM
Abstract :
Calculations of the thermal resistances of stripe-geometry double-heterostructure lasers are dependent on assumptions made concerning the positions of heat sources within the laser structures. The effect on thermal resistance of heat sources located at various levels in the multilayer structure are considered here. The calculations indicate that thermal resistances of proton-isolated structures can be approximately halved when energy is radiatively transferred from the device active region rather than when all heat is generated within the device active region. This should be taken into consideration when the experimental effectiveness of laser-dice-bonding technology is being evaluated.
Keywords :
semiconductor junction lasers; thermal resistance; laser dice bonding technology; proton isolated double heterostructure lasers; stripe geometry lasers; thermal resistance models;
Journal_Title :
Solid-State and Electron Devices, IEE Journal on
DOI :
10.1049/ij-ssed.1978.0007