• DocumentCode
    1213294
  • Title

    Trap enhanced conductivity modulation effect in P+-N-N + GaAs diodes

  • Author

    Manifacier, J.C. ; Ardebili, R. ; Moreau, Y. ; Michez, A. ; Bordure, G.

  • Author_Institution
    Centre d´´Electron. de Montpellier, Univ. des Sci. et Tech. du Languedoc, Montpellier, France
  • Volume
    31
  • Issue
    24
  • fYear
    1995
  • fDate
    11/23/1995 12:00:00 AM
  • Firstpage
    2133
  • Lastpage
    2134
  • Abstract
    Through computer resolution of the transport equations, the authors show the influence of deep centres on the behaviour of P+ -N-N+ or P+-I-N+ GaAs diodes at high forward current levels. Depending on the nature (hole or electron trap) and density of these deep centres, it is possible to decrease the voltage drop at high forward current density and thus to increase the power efficiency of the devices
  • Keywords
    III-V semiconductors; deep levels; electron traps; gallium arsenide; hole traps; power semiconductor diodes; GaAs; P+-I-N+ diodes; P+-N-N+ diodes; computer simulation; conductivity modulation; deep centres; electron traps; forward current density; hole traps; power efficiency; transport equations; voltage drop;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19951403
  • Filename
    480756
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1213294